Биполярный транзистор DRC3115E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRC3115E
Маркировка: NN
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SSSMINI3-F2-B
DRC3115E Datasheet (PDF)
drc3115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115EDRC9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115TDRC9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
drc3115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115GDRC9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114TDRC9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturiza
drc3114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114EDRC9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114YDRC9114Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114WDRC9114W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3113ZDRC9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
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