Биполярный транзистор DRC5113Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRC5113Z
Маркировка: N1
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SMINI3-F2-B
DRC5113Z Datasheet (PDF)
drc5113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5113ZDRC2113Z in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
drc5114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5114TDRC2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
drc5115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5115TDRC2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
drc5114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5114YDRC2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
drc5114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5114EDRC2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
drc5114w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5114WDRC2114W in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
drc5115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5115EDRC2115E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
drc5115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5115GDRC2115T in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
