Справочник транзисторов. DTA114TKAFRA

 

Биполярный транзистор DTA114TKAFRA - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTA114TKAFRA
   Маркировка: 94
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT-346

 Аналоги (замена) для DTA114TKAFRA

 

 

DTA114TKAFRA Datasheet (PDF)

 ..1. Size:1464K  rohm
dta114teb dta114tefra dta114tkafra dta114tmfha dta114tuafra dta114tub.pdf

DTA114TKAFRA
DTA114TKAFRA

DTA114T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-100mA R110kDTA114TM DTA114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB

 5.1. Size:1465K  rohm
dta114tka.pdf

DTA114TKAFRA
DTA114TKAFRA

DTA114T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-100mA R110kDTA114TM DTA114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB

 5.2. Size:178K  diodes
ddta114tka.pdf

DTA114TKAFRA
DTA114TKAFRA

DDTA (R1-ONLY SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R1 only SC-59 Lead Free/RoHS Compliant (Note 2) B C Dim Min Max "Green" Device (Note 3 and 4) A 0.35 0.50 Mechanical Data B 1.50 1.70 GC 2.70 3.00 Case

 6.1. Size:53K  motorola
pdta114tk 3.pdf

DTA114TKAFRA
DTA114TKAFRA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA114TKPNP resistor-equipped transistor1998 May 15Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.2. Size:53K  philips
pdta114tk 3.pdf

DTA114TKAFRA
DTA114TKAFRA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA114TKPNP resistor-equipped transistor1998 May 15Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.3. Size:80K  nxp
pdta114tk pdta114ts.pdf

DTA114TKAFRA
DTA114TKAFRA

PDTA114T seriesPNP resistor-equipped transistors; R1 = 10 k, R2 = openRev. 07 20 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family in small plastic packages.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA114TE SOT416 SC-75 - PDTC114TEPDTA114TK SOT346 SC-59A TO-236 PDTC114

 6.4. Size:106K  chenmko
chdta114tkgp.pdf

DTA114TKAFRA
DTA114TKAFRA

CHENMKO ENTERPRISE CO.,LTDCHDTA114TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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