Биполярный транзистор DTA115EET1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTA115EET1G
Маркировка: 6N
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
SC-75
Аналоги (замена) для DTA115EET1G
DTA115EET1G
Datasheet (PDF)
..1. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.1. Size:99K onsemi
nsvdta115eet1g.pdf MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains
6.1. Size:417K nxp
pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.2. Size:139K nxp
pdta115eef pdta115ek pdta115es.pdf DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
6.3. Size:156K rohm
dta115eeb.pdf 100mA / 50V Digital transistors (with built-in resistors) DTA115EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely in
6.4. Size:141K rohm
dta115e-ser dta115ee dta115eka.pdf -100mA / -50V Digital transistors (with built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolatio
6.5. Size:1385K rohm
dta115eefra dta115ekafra dta115emfha dta115euafra.pdf DTA115E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuratio
6.6. Size:1291K rohm
dta115em dta115eeb dta115ee dta115eub dta115eua dta115eka.pdf DTA115E seriesDatasheetPNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-723 SOT-416FLVCC-50VIC(MAX.)-100mA R1100kDTA115EM DTA115EEBR2 (VMT3) (EMT3F)100k SOT-416 SOT-323FLlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the con
6.8. Size:227K diodes
ddta115ee.pdf DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
6.9. Size:99K chenmko
chdta115eegp.pdf CHENMKO ENTERPRISE CO.,LTDCHDTA115EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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