DTA115EET1G. Аналоги и основные параметры

Наименование производителя: DTA115EET1G

Маркировка: 6N

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 100 kOhm

Встроенный резистор цепи смещения R2 = 100 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SC-75

 Аналоги (замена) для DTA115EET1G

- подборⓘ биполярного транзистора по параметрам

 

DTA115EET1G даташит

 ..1. Size:222K  onsemi
 dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf pdf_icon

DTA115EET1G

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:99K  onsemi
 nsvdta115eet1g.pdf pdf_icon

DTA115EET1G

MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains

 0.2. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

DTA115EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 6.1. Size:417K  nxp
 pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf pdf_icon

DTA115EET1G

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: DTA114YKAFRA, DTA114YM3, DTA114YM3T5G, DTA114YMFHA, DTA114YN3, DTA114YS3, DTA114YUAFRA, DTA115EEFRA, BC558, DTA115EKAFRA, DTA115EM3, DTA115EM3T5G, DTA115EMFHA, DTA115EN3, DTA115EUAFRA, DTA115TET1G, DTA115TM3