MUN2141, MMUN2141L,MUN5141, DTA115TE,DTA115TM3, NSBA115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTA115TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

DTA115T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO-50VBase Base IC-100mAEmitter Emitter R1100kWDTA115TM DTA115TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter

DDTA (R1-ONLY SERIES) EDDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B CTOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22Mecha

SMD Type TransistorsDigital TransistorsDTA115TE (KDTA115TE )SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1 Features+0.050.2 -0.05 0.150.05 Built-in bias resistors enable the configuration of an inverter circuit2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolatio

CHENMKO ENTERPRISE CO.,LTDCHDTA115TEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c