DTC114EM3T5G. Аналоги и основные параметры
Наименование производителя: DTC114EM3T5G
Маркировка: 8A
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.26 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 35
Корпус транзистора: SOT-723
Аналоги (замена) для DTC114EM3T5G
- подборⓘ биполярного транзистора по параметрам
DTC114EM3T5G даташит
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DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
ldtc114em3t5g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
Другие транзисторы: DTC113ZVA, DTC114EA3, DTC114EB3, DTC114EC3, DTC114EEFRA, DTC114EET1G, DTC114EKAFRA, DTC114EM3, C945, DTC114EMFHA, DTC114EN3, DTC114ES3, DTC114EUAFRA, DTC114EY3, DTC114TEB, DTC114TEFRA, DTC114TET1G
History: 2SC3571 | RT3N55M
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