Справочник транзисторов. DTC114YEFRA

 

Биполярный транзистор DTC114YEFRA - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC114YEFRA
   Маркировка: 64
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.21
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.07 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 68
   Корпус транзистора: SOT-416

 Аналоги (замена) для DTC114YEFRA

 

 

DTC114YEFRA Datasheet (PDF)

 ..1. Size:1523K  rohm
dtc114yefra dtc114ykafra dtc114ymfha dtc114yuafra.pdf

DTC114YEFRA
DTC114YEFRA

DTC114Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114YM DTC114YEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y

 6.1. Size:144K  motorola
dtc114yerev1.pdf

DTC114YEFRA
DTC114YEFRA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.2. Size:94K  motorola
dtc114ye 69 sot416.pdf

DTC114YEFRA
DTC114YEFRA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.3. Size:56K  motorola
pdtc114ye 3.pdf

DTC114YEFRA
DTC114YEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

 6.4. Size:56K  philips
pdtc114ye 3.pdf

DTC114YEFRA
DTC114YEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

 6.5. Size:140K  rohm
dtc114y-series dtc114ye.pdf

DTC114YEFRA
DTC114YEFRA

100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

 6.6. Size:152K  rohm
dtc114yeb.pdf

DTC114YEFRA
DTC114YEFRA

100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)0

 6.7. Size:69K  rohm
dtc114ye-yua-yka 64 sot416 323 346.pdf

DTC114YEFRA
DTC114YEFRA

TransistorsDigital transistors (built-in resistors)DTC114YE / DTC114YUA / DTC114YKADTC114YSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 6.8. Size:237K  diodes
ddtc114ye.pdf

DTC114YEFRA
DTC114YEFRA

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 6.9. Size:197K  mcc
dtc114ye.pdf

DTC114YEFRA
DTC114YEFRA

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC114YEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the

 6.10. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC114YEFRA
DTC114YEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.11. Size:144K  onsemi
sdtc114yet1g.pdf

DTC114YEFRA
DTC114YEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.12. Size:135K  onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf

DTC114YEFRA
DTC114YEFRA

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 6.13. Size:326K  htsemi
dtc114yca dtc114ye dtc114yka dtc114ysa dtc114yua.pdf

DTC114YEFRA
DTC114YEFRA

DTC114YE/DTC114YUA /DTC114YKA/DTC114YSA/DTC114YCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost c

 6.14. Size:293K  willas
dtc114ye.pdf

DTC114YEFRA

FM120-M WILLASTHRUDTC114YENPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFe Batch process design, excellent power dissipation offersFeaturesatures better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order toSOT-5

 6.15. Size:96K  chenmko
chdtc114yegp.pdf

DTC114YEFRA
DTC114YEFRA

CHENMKO ENTERPRISE CO.,LTDCHDTC114YEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

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