DTC114YET1G. Аналоги и основные параметры
Наименование производителя: DTC114YET1G
Маркировка: 8D
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SOT-416
Аналоги (замена) для DTC114YET1G
- подборⓘ биполярного транзистора по параметрам
DTC114YET1G даташит
..1. Size:144K onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
0.1. Size:144K onsemi
sdtc114yet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
6.1. Size:144K motorola
dtc114yerev1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base emitter resis
6.2. Size:94K motorola
dtc114ye 69 sot416.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base emitter resis
6.3. Size:56K motorola
pdtc114ye 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification
6.4. Size:56K philips
pdtc114ye 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification
6.5. Size:1523K rohm
dtc114yefra dtc114ykafra dtc114ymfha dtc114yuafra.pdf 
DTC114Y series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 10k DTC114YM DTC114YEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y
6.6. Size:140K rohm
dtc114y-series dtc114ye.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
6.7. Size:152K rohm
dtc114yeb.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) 0
6.8. Size:69K rohm
dtc114ye-yua-yka 64 sot416 323 346.pdf 
Transistors Digital transistors (built-in resistors) DTC114YE / DTC114YUA / DTC114YKA DTC114YSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias
6.9. Size:237K diodes
ddtc114ye.pdf 
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60
6.10. Size:197K mcc
dtc114ye.pdf 
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTC114YE Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
6.11. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf 
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT
6.12. Size:326K htsemi
dtc114yca dtc114ye dtc114yka dtc114ysa dtc114yua.pdf 
DTC114YE/DTC114YUA /DTC114YKA/DTC114YSA/DTC114YCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost c
6.13. Size:293K willas
dtc114ye.pdf 
FM120-M WILLAS THRU DTC114YE NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Fe Batch process design, excellent power dissipation offers Featuresatures better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to SOT-5
6.14. Size:96K chenmko
chdtc114yegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC114YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
Другие транзисторы: DTC114TN3, DTC114TS3, DTC114TUAFRA, DTC114TUB, DTC114WN3, DTC114WS3, DTC114YC3, DTC114YEFRA, TIP31C, DTC114YKAFRA, DTC114YM3, DTC114YM3T5G, DTC114YMFHA, DTC114YN3, DTC114YS3, DTC114YUAFRA, DTC115EC3
