DTC115EY3. Аналоги и основные параметры
Наименование производителя: DTC115EY3
Маркировка: 8N
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 82
Корпус транзистора: SOT-723
Аналоги (замена) для DTC115EY3
- подборⓘ биполярного транзистора по параметрам
DTC115EY3 даташит
..1. Size:327K cystek
dtc115ey3.pdf 
Spec. No. C356Y3 Issued Date 2011.11.03 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC115EY3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
7.1. Size:182K philips
pdtc115e series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.2. Size:138K nxp
pdtc115eef pdtc115ek pdtc115es.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.3. Size:70K rohm
dtc115eka dtc115esa dtc115eua.pdf 
DTC115EM / DTC115EE / DTC115EUA Transistors DTC115EKA / DTC115ESA Digital transistors (built-in resistors) DTC115EM / DTC115EE / DTC115EUA DTC115EKA / DTC115ESA Equivalent circuit Features 1) Built-in bias resistors enable the configuration of an inverter circuit R1 OUT without connecting external input resistors (see the equivalent IN circuit). R2 2) The bias resistors consist o
7.4. Size:180K rohm
dtc115eeb.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit mm) EMT3F Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insu
7.6. Size:1384K rohm
dtc115eefra dtc115ekafra dtc115emfha dtc115euafra.pdf 
DTC115E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 100k DTC115EM DTC115EEB R2 (SC-105AA) (SC-89) 100k EMT3 UMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuration of
7.7. Size:181K rohm
dtc115em.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC115EM / DTC115EE / DTC115EUA / DTC115EKA Applications Inner circuit Inverter, Interface, Driver R1 OUT IN R2 Features GND 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). IN OUT 2) The bias resistors consist of t
7.8. Size:995K rohm
dtc115eca.pdf 
DTC115ECA Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) lOutline l Parameter Value SOT-23 VCC 50V IC(MAX.) 100mA R1 100k R2 (SST3) 100k lFeatures lInner circuit l l 1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable th
7.9. Size:545K diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf 
DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
7.10. Size:178K diodes
ddtc115eka.pdf 
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data G G
7.11. Size:352K diodes
ddtc115ee.pdf 
DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
7.12. Size:89K diodes
ddtc115eua.pdf 
DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free "Gr
7.13. Size:99K diodes
ddtc123eca ddtc143eca ddtc114eca ddtc124eca ddtc144eca ddtc115eca.pdf 
DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Types Available (DDTA) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia
7.14. Size:140K onsemi
dtc115em3.pdf 
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) conta
7.15. Size:144K onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
7.16. Size:82K onsemi
dtc115em3t5g.pdf 
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
7.17. Size:146K utc
dtc115e.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTC115E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
7.18. Size:378K cystek
dtc115ec3.pdf 
Spec. No. C356C3 Issued Date 2011.11.03 CYStech Electronics Corp. Revised Date 2014.03.04 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC115EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w
7.19. Size:181K cystek
dtc115en3.pdf 
Spec. No. C356N3 Issued Date 2004.02.26 CYStech Electronics Corp. Revised Date 2007.07.12 Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTC115EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
7.21. Size:545K lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf 
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
7.22. Size:103K chenmko
chdtc115eugp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC115EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
7.23. Size:70K chenmko
chdtc115ekgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC115EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
7.24. Size:54K chenmko
chdtc115eegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC115EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
Другие транзисторы: DTC115EEFRA, DTC115EET1G, DTC115EKAFRA, DTC115EM3, DTC115EM3T5G, DTC115EMFHA, DTC115EN3, DTC115EUAFRA, BC546, DTC115TC3, DTC115TE, DTC115TET1G, DTC115TM, DTC123JEFRA, DTC123JET1G, DTC123JKAFRA, DTC123JM3
