Справочник транзисторов. DTC124ES3

 

Биполярный транзистор DTC124ES3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC124ES3
   Маркировка: 8B
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.03 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SOT-323

 Аналоги (замена) для DTC124ES3

 

 

DTC124ES3 Datasheet (PDF)

 ..1. Size:146K  cystek
dtc124es3.pdf

DTC124ES3
DTC124ES3

Spec. No. : C363S3 Issued Date : 2002.08.16 CYStech Electronics Corp.Revised Date :2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC124ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-fi

 6.1. Size:58K  motorola
pdtc124es 2.pdf

DTC124ES3
DTC124ES3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 6.2. Size:58K  philips
pdtc124es 2.pdf

DTC124ES3
DTC124ES3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 6.3. Size:245K  secos
dtc124eseries.pdf

DTC124ES3
DTC124ES3

DTC124EE/DTC124EUA/DTC124EKADTC124ECA/TC124ESAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 6.4. Size:217K  secos
dtc124eca dtc124eka dtc124esa dtc124eua.pdf

DTC124ES3
DTC124ES3

DTC124EE/DTC124EUA/DTC124EKADTC124ECA/TC124ESAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 6.5. Size:407K  htsemi
dtc124eca dtc124ee dtc124eka dtc124esa dtc124eua.pdf

DTC124ES3
DTC124ES3

/DTC124EKA/DTC124ESADTC124EE/DTC124EUA/DTC124ECA DIGITAL TRANSISTOR (NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almo

 6.6. Size:1224K  kexin
dtc124esa.pdf

DTC124ES3
DTC124ES3

DIP Type TransistorsDigital TransistorsDTC124ESA (KDTC124ESA)TO-92SUnit:mm4.00.12.480.245 TYP Features Built-in bias resistors enable the configuration of an inverter circuit0.48 (max) without connecting external input resistors(see equivalent circuit) 0.35 (min ) The bias resistors consist of thin-film resistors with complete21 3 isolation to allo

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