DTC124XN3 datasheet, аналоги, основные параметры
Наименование производителя: DTC124XN3
Маркировка: 8L
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.47
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 68
Корпус транзистора: SOT-23
Аналоги (замена) для DTC124XN3
- подборⓘ биполярного транзистора по параметрам
DTC124XN3 даташит
..1. Size:152K cystek
dtc124xn3.pdf 
Spec. No. C366N3 Issued Date 2003.05.27 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTC124XN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
7.1. Size:54K motorola
pdtc124xef 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha
7.2. Size:55K motorola
pdtc124xe 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage
7.3. Size:54K philips
pdtc124xef 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha
7.4. Size:55K philips
pdtc124xe 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage
7.5. Size:138K nxp
pdtc124x.pdf 
PDTC124X series NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 07 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC124XE SOT416 SC-75 - PDTA124XE PDTC124XEF SOT490 SC-89 - PDTA124XEF PDTC124XK SOT346 SC-59
7.6. Size:138K nxp
pdtc124xef pdtc124xk pdtc124xs.pdf 
PDTC124X series NPN resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 07 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC124XE SOT416 SC-75 - PDTA124XE PDTC124XEF SOT490 SC-89 - PDTA124XEF PDTC124XK SOT346 SC-59
7.8. Size:141K rohm
dtc124x-series.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
7.9. Size:626K rohm
dtc124xe.pdf 
DTC124X series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 22kW DTC124XM DTC124XE R2 (SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3 OUT lFeatures OUT 1) Built-In Biasing Resistors IN IN 2) Built-in bias resistors enable the configuration
7.10. Size:69K rohm
dtc124xe-xua-xka 45 sot416 323 346.pdf 
Transistors Digital transistors (built-in resistors) DTC124XE / DTC124XUA / DTC124XKA DTC124XSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias
7.11. Size:864K rohm
dtc124xca.pdf 
DTC124XCA Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) lOutline l Parameter Value SOT-23 VCC 50V IC(MAX.) 100mA R1 22k R2 (SST3) 47k lFeatures lInner circuit l l 1) Built-In Biasing Resistors, R1 = 22k , R2 = 47k 2) Built-in bias resistors
7.12. Size:140K rohm
dtc124xka dtc124xua.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation
7.13. Size:2061K rohm
dtc124xefra dtc124xkafra dtc124xmfha dtc124xuafra.pdf 
DTC124X series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC 50V IC(MAX.) 100mA R1 22k DTC124XMFHA DTC124XEFRA DTC124XM DTC124XE R2 (SC-105AA) SOT-416(SC-75A) 47k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias re
7.14. Size:204K diodes
ddtc124xka.pdf 
DDTC (R1 R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1 R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B C A 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case
7.15. Size:203K diodes
ddtc124xua.pdf 
DDTC (R1 R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No
7.16. Size:93K diodes
ddtc124xca.pdf 
DDTC (R1 R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1 R2 DDTC123YCA 2.2K 10K Lead Free , RoHS Compliant (Note 1) DDTC123JCA
7.17. Size:237K diodes
ddtc124xe.pdf 
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60
7.18. Size:150K onsemi
dtc124xm3.pdf 
MUN2234, MMUN2234L, MUN5234, DTC124XE, DTC124XM3, NSBC124XF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 47 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor
7.19. Size:144K onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
7.20. Size:82K onsemi
dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf 
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
7.21. Size:155K cystek
dtc124xs3.pdf 
Spec. No. C366S3 Issued Date 2003.06.26 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTC124XS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
7.23. Size:545K lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf 
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
7.24. Size:169K chenmko
chdtc124xugp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC124XUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
7.25. Size:160K chenmko
chdtc124xegp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC124XEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
7.26. Size:146K chenmko
chdtc124xkgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHDTC124XKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
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