Справочник транзисторов. DTC124XN3

 

Биполярный транзистор DTC124XN3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC124XN3
   Маркировка: 8L
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.47
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 68
   Корпус транзистора: SOT-23

 Аналоги (замена) для DTC124XN3

 

 

DTC124XN3 Datasheet (PDF)

 ..1. Size:152K  cystek
dtc124xn3.pdf

DTC124XN3
DTC124XN3

Spec. No. : C366N3 Issued Date : 2003.05.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTC124XN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 7.1. Size:54K  motorola
pdtc124xef 2.pdf

DTC124XN3
DTC124XN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 7.2. Size:55K  motorola
pdtc124xe 3.pdf

DTC124XN3
DTC124XN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 7.3. Size:54K  philips
pdtc124xef 2.pdf

DTC124XN3
DTC124XN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 7.4. Size:55K  philips
pdtc124xe 3.pdf

DTC124XN3
DTC124XN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 7.5. Size:138K  nxp
pdtc124x.pdf

DTC124XN3
DTC124XN3

PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59

 7.6. Size:138K  nxp
pdtc124xef pdtc124xk pdtc124xs.pdf

DTC124XN3
DTC124XN3

PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59

 7.7. Size:881K  rohm
dtc114ek dtc124xk.pdf

DTC124XN3
DTC124XN3

 7.8. Size:141K  rohm
dtc124x-series.pdf

DTC124XN3
DTC124XN3

100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

 7.9. Size:626K  rohm
dtc124xe.pdf

DTC124XN3
DTC124XN3

DTC124X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R122kWDTC124XM DTC124XE R2(SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3OUT lFeaturesOUT 1) Built-In Biasing ResistorsIN IN 2) Built-in bias resistors enable the configuration

 7.10. Size:69K  rohm
dtc124xe-xua-xka 45 sot416 323 346.pdf

DTC124XN3
DTC124XN3

TransistorsDigital transistors (built-in resistors)DTC124XE / DTC124XUA / DTC124XKADTC124XSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 7.11. Size:864K  rohm
dtc124xca.pdf

DTC124XN3
DTC124XN3

DTC124XCADatasheetNPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-23VCC50VIC(MAX.)100mA R122k R2 (SST3) 47k lFeatures lInner circuitl l1) Built-In Biasing Resistors, R1 = 22k, R2 = 47k2) Built-in bias resistors

 7.12. Size:140K  rohm
dtc124xka dtc124xua.pdf

DTC124XN3
DTC124XN3

100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

 7.13. Size:2061K  rohm
dtc124xefra dtc124xkafra dtc124xmfha dtc124xuafra.pdf

DTC124XN3
DTC124XN3

DTC124X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC50VIC(MAX.)100mA R122kDTC124XMFHA DTC124XEFRADTC124XM DTC124XER2 (SC-105AA) SOT-416(SC-75A)47k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors 2) Built-in bias re

 7.14. Size:204K  diodes
ddtc124xka.pdf

DTC124XN3
DTC124XN3

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

 7.15. Size:203K  diodes
ddtc124xua.pdf

DTC124XN3
DTC124XN3

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

 7.16. Size:93K  diodes
ddtc124xca.pdf

DTC124XN3
DTC124XN3

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

 7.17. Size:237K  diodes
ddtc124xe.pdf

DTC124XN3
DTC124XN3

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 7.18. Size:150K  onsemi
dtc124xm3.pdf

DTC124XN3
DTC124XN3

MUN2234, MMUN2234L,MUN5234, DTC124XE,DTC124XM3, NSBC124XF3Digital Transistors (BRT) R1 = 22 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

 7.19. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC124XN3
DTC124XN3

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 7.20. Size:82K  onsemi
dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf

DTC124XN3
DTC124XN3

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 7.21. Size:155K  cystek
dtc124xs3.pdf

DTC124XN3
DTC124XN3

Spec. No. : C366S3 Issued Date : 2003.06.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTC124XS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 7.22. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC124XN3
DTC124XN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.23. Size:545K  lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC124XN3
DTC124XN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.24. Size:169K  chenmko
chdtc124xugp.pdf

DTC124XN3
DTC124XN3

CHENMKO ENTERPRISE CO.,LTDCHDTC124XUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 7.25. Size:160K  chenmko
chdtc124xegp.pdf

DTC124XN3
DTC124XN3

CHENMKO ENTERPRISE CO.,LTDCHDTC124XEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 7.26. Size:146K  chenmko
chdtc124xkgp.pdf

DTC124XN3
DTC124XN3

CHENMKO ENTERPRISE CO.,LTDCHDTC124XKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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