Справочник транзисторов. DTC143EEFRA

 

Биполярный транзистор DTC143EEFRA - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC143EEFRA
   Маркировка: 23
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT-416

 Аналоги (замена) для DTC143EEFRA

 

 

DTC143EEFRA Datasheet (PDF)

 ..1. Size:1522K  rohm
dtc143eefra dtc143ekafra dtc143emfha.pdf

DTC143EEFRA
DTC143EEFRA

DTC143E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143EM DTC143EEBR2 (SC-105AA) (SC-89)4.7k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 4.7k 2) Built-in bias resistors enable the configuration o

 6.1. Size:56K  motorola
pdtc143ee 2.pdf

DTC143EEFRA
DTC143EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.2. Size:56K  philips
pdtc143ee 2.pdf

DTC143EEFRA
DTC143EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

 6.3. Size:141K  rohm
dtc143e-series dtc143ee.pdf

DTC143EEFRA
DTC143EEFRA

100mA / 50V Digital transistors (with built-in resistors) DTC143EM / DTC143EE / DTC143EUA / DTC143EKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

 6.4. Size:68K  rohm
dtc143ee-eua-eka 23 sot416 323 346.pdf

DTC143EEFRA
DTC143EEFRA

TransistorsDigital transistors (built-in resistors)DTC143EE / DTC143EUA / DTC143EKADTC143ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 6.5. Size:59K  rohm
dtc143eeb.pdf

DTC143EEFRA
DTC143EEFRA

Transistors DTC143EEB 100mA / 50V Digital transistors (with built-in resistors) DTC143EEB Applications Dimensions (Unit : mm)Inverter, Interface, DriverEMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting externalinput resistors (see equivalent circuit). 2) The bias resistors con

 6.6. Size:545K  diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DTC143EEFRA
DTC143EEFRA

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 6.7. Size:352K  diodes
ddtc143ee.pdf

DTC143EEFRA
DTC143EEFRA

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 6.8. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC143EEFRA
DTC143EEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.9. Size:351K  willas
dtc143ee.pdf

DTC143EEFRA
DTC143EEFRA

FM120-MWILLASTHRUDTC143EEBias Resistor TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.NPN Silicon Surface Mount TransistorsSOD-123H Low profile surface mounted appli

 6.10. Size:88K  chenmko
chdtc143eegp.pdf

DTC143EEFRA
DTC143EEFRA

CHENMKO ENTERPRISE CO.,LTDCHDTC143EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.11. Size:7028K  msksemi
dtc143eua-ms dtc143ee-ms dtc143eca-ms dtc143eka-ms.pdf

DTC143EEFRA
DTC143EEFRA

www.msksemi.comDTC143Semiconductor CompianceSemiconductor CompianceDIGITAL TRANSISTOR (NPN)FEATURESBuilt-in bias resistors enable theconfiguration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit)The bias resistors consist of thin-film resistorswith complete isolation to allow negative biasingof the input.They also have the advantag

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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