Справочник транзисторов. DTC143ZKAFRA

 

Биполярный транзистор DTC143ZKAFRA - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC143ZKAFRA
   Маркировка: E23
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT-346

 Аналоги (замена) для DTC143ZKAFRA

 

 

DTC143ZKAFRA Datasheet (PDF)

 ..1. Size:1515K  rohm
dtc143zefra dtc143zkafra dtc143zmfha dtc143zuafra.pdf

DTC143ZKAFRA
DTC143ZKAFRA

DTC143Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143ZM DTC143ZEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143ZE DTC143

 5.1. Size:1515K  rohm
dtc143zka.pdf

DTC143ZKAFRA
DTC143ZKAFRA

DTC143Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143ZM DTC143ZEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143ZE DTC143

 5.2. Size:204K  diodes
ddtc143zka.pdf

DTC143ZKAFRA
DTC143ZKAFRA

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

 6.1. Size:55K  motorola
pdtc143zk 3.pdf

DTC143ZKAFRA
DTC143ZKAFRA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143ZKNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZKFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 and 47 krespectively) Simplification of circuit design33

 6.2. Size:55K  philips
pdtc143zk 3.pdf

DTC143ZKAFRA
DTC143ZKAFRA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143ZKNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZKFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 and 47 krespectively) Simplification of circuit design33

 6.3. Size:154K  chenmko
chdtc143zkgp.pdf

DTC143ZKAFRA
DTC143ZKAFRA

CHENMKO ENTERPRISE CO.,LTDCHDTC143ZKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

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