DTC144EET1G datasheet, аналоги, основные параметры

Наименование производителя: DTC144EET1G

Маркировка: 8C

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT-416

 Аналоги (замена) для DTC144EET1G

- подборⓘ биполярного транзистора по параметрам

 

DTC144EET1G даташит

 ..1. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdfpdf_icon

DTC144EET1G

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 0.1. Size:116K  onsemi
sdtc144eet1g.pdfpdf_icon

DTC144EET1G

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

 6.1. Size:54K  motorola
pdtc144eef 1.pdfpdf_icon

DTC144EET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144EEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC144EEF FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification of circuit design 3 handbook, halfpage 3 R1 Reduces number of components

 6.2. Size:56K  motorola
pdtc144ee 2.pdfpdf_icon

DTC144EET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC144EE NPN resistor-equipped transistor 1998 Jul 16 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144EE FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification of circuit design

Другие транзисторы: DTC143ZM3, DTC143ZM3T5G, DTC143ZMFHA, DTC143ZN3, DTC143ZS3, DTC143ZUAFRA, DTC144EC3, DTC144EEFRA, 2SC2073, DTC144EKAFRA, DTC144TEFRA, DTC144TET1G, DTC144TKAFRA, DTC144TM3, DTC144TM3T5G, DTC144TMFHA, DTC144TN3