Справочник транзисторов. DTC144WET1G

 

Биполярный транзистор DTC144WET1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC144WET1G
   Маркировка: 8P
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 2.1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT-416

 Аналоги (замена) для DTC144WET1G

 

 

DTC144WET1G Datasheet (PDF)

 ..1. Size:144K  onsemi
dtc144wet1g.pdf

DTC144WET1G
DTC144WET1G

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 0.1. Size:156K  onsemi
nsvdtc144wet1g.pdf

DTC144WET1G
DTC144WET1G

MUN2237, MMUN2237L,MUN5237, DTC144WE,DTC144WM3, NSBC144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 6.1. Size:139K  nxp
pdtc144wef pdtc144wk pdtc144ws.pdf

DTC144WET1G
DTC144WET1G

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.2. Size:581K  rohm
dtc144we.pdf

DTC144WET1G
DTC144WET1G

DTC144W seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline EMT3 UMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R147kWDTC144WE DTC144WUA R2SOT-416 (SC-75A) 22kW SOT-323 (SC-70) SMT3lFeatures OUT 1) Built-In Biasing ResistorsIN 2) Built-in bias resistors enable the configuration ofGND

 6.3. Size:45K  rohm
dtc144we-wua-wka 86 sot416 323 346.pdf

DTC144WET1G

(94S-579-144W

 6.4. Size:237K  diodes
ddtc144we.pdf

DTC144WET1G
DTC144WET1G

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 6.5. Size:85K  chenmko
chdtc144wegp.pdf

DTC144WET1G
DTC144WET1G

CHENMKO ENTERPRISE CO.,LTDCHDTC144WEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur

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