Справочник транзисторов. DTC623TN3

 

Биполярный транзистор DTC623TN3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC623TN3
   Маркировка: R02
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 820
   Корпус транзистора: SOT-23

 Аналоги (замена) для DTC623TN3

 

 

DTC623TN3 Datasheet (PDF)

 ..1. Size:285K  cystek
dtc623tn3.pdf

DTC623TN3
DTC623TN3

Spec. No. : C650N3 Issued Date : 2011.01.06 CYStech Electronics Corp.Revised Date : 2011.10.04 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC623TN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:70K  rohm
dtc623tu.pdf

DTC623TN3
DTC623TN3

DTC623TU / DTC623TK Transistors Digital transistors (built-in resistor) DTC623TU / DTC623TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.10.65 0.65VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.70.1(1) (2)transistors ideal

 7.2. Size:53K  rohm
dtc623tk dtc623tu.pdf

DTC623TN3
DTC623TN3

DTC623TU / DTC623TK Transistors Digital transistors (built-in resistor) DTC623TU / DTC623TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2UMT31) Low saturation voltage, typically 1.30.1 0.90.10.65 0.65VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.2 0.70.1(1) (2)transistors ideal

 7.3. Size:87K  chenmko
chdtc623tkgp.pdf

DTC623TN3
DTC623TN3

CHENMKO ENTERPRISE CO.,LTDCHDTC623TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for

 7.4. Size:88K  chenmko
chdtc623tugp.pdf

DTC623TN3
DTC623TN3

CHENMKO ENTERPRISE CO.,LTDCHDTC623TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transist

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