Справочник транзисторов. DTD123TK

 

Биполярный транзистор DTD123TK - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTD123TK
   Маркировка: F02
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT-346

 Аналоги (замена) для DTD123TK

 

 

DTD123TK Datasheet (PDF)

 ..1. Size:329K  rohm
dtd123tk.pdf

DTD123TK DTD123TK

DTD123TKDatasheetNPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueCollector VCEO40VBase IC500mAEmitter R 2.2kWDTD123TK SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (

 0.1. Size:120K  nxp
pdtd123tk pdtd123ts.pdf

DTD123TK DTD123TK

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

 0.2. Size:103K  chenmko
chdtd123tkgp.pdf

DTD123TK DTD123TK

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.1. Size:121K  nxp
pdtd123t.pdf

DTD123TK DTD123TK

PDTD123T seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD123TK SOT346 SC-59A TO-236 PDTB123TKPDTD123TS[1] SOT54 SC-43A TO-92 PD

 7.2. Size:167K  diodes
ddtd123tu.pdf

DTD123TK DTD123TK

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.

 7.3. Size:70K  diodes
ddtd123tc.pdf

DTD123TK DTD123TK

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re

 7.4. Size:326K  lrc
ldtd123tet1g.pdf

DTD123TK DTD123TK

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

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