Transistor2SA1034, 2SA1035Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC2405 and 2SC2406Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

SMD Type TransistorsPNP Transistors2SA1034SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-35V1 2 Complementary to 2SC2405+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

2SA1036KDatasheetMedium Power Transistor (-32V,-500mA)lOutlinelParameter Value SMT3VCEO-32VIC-500mASOT-346SC-59 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K.lApplicationlGENERAL PURPOSE SMALL SIG

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.252.10.1Min.Each lead has same dimensionsROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) BaseJEDEC : SOT-

General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25Structure 1.62.12.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dimensionsEach lead has same

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA1037AK FRADatasheetGeneral Purpose Transistor (-50V, -150mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-50VIC-150mASMT3lFeatures lInner circuitl l1)Excellent hFE linearity.2)Complements the 2SC2412K FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec

2SA1036K FRADatasheetMedium Power Transistor (-32V,-500mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-500mASMT3lFeatures lInner circuitl l1) High IC(=500mA) on small package.2)Low VCE(sat). Ideal for low-voltage operating.3)Complements the 2SC2411K FRA.lApplicationlGENERAL PURPOSE SM

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1037-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1037-RCA 91311Phone: (818) 701-49332SA1037-SFax: (818) 701-4939Features Small PackagePNP Silicon Mounting:any positionEpitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant

MCC2SA1036-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1036-QCA 91311Phone: (818) 701-49332SA1036-RFax: (818) 701-4939FeaturesPNP Silicon Large IC. ICMax.= -0.5 A Low VCE(sat).Ideal for low-voltage operation.Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

2SA1031, 2SA1032Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1031, 2SA1032Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1031 2SA1032 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 V

2SA1029, 2SA1030Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC458 and 2SC2308OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1029, 2SA1030Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1029 2SA1030 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L33Top ViewC BCLASSIFICATION OF hFE 11 2Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2K ERange 82~180 120~270 1

2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L33MECHANICAL DATA Top ViewC B Case: SOT-23, Molded Plastic 11 2 Weight: 0.008 grams(approx.) 2K EDH JCLASSIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1036 TRANSISTOR (PNP) 3FEATURES 1 Large IC. ICMax.= -500 mA 2 Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1037 TRANSISTOR (PNP) 3FEATURES 1 Excellent hFE linearity. Complments the 2SC2412 1. BASE 22. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO

2SA1 036TRANSISTOR(PNP)SOT-23 FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector

2SA1 037SOT-23 TRANSISTOR(PNP)FEATURES Excellent hFE linearity. Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 m

2SA1036K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.151.90MARKING : HP, HQ, HR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VC

2SA1037AK SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2.922. EMITTER 0.353. COLLECTOR 1.17Features2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.151.90MARKING : FQ, FR, FS Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter

2SA1036 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1037 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6

2SA1036KPNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO-32 VVCBOCollector-Base Voltage -40 VVEBOEmitter-Base Voltage -5.0 VICCollector Current - Continuous -500* mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature

2SA1037AKPNP3P b Lead(Pb)-Free12SOT-23ValueVCEO -50-60-6.0-1502001.6625TJ ,Tstg-1.0-50-50 -60-6.0-50u-0.1IE= ) OVdc, 0E=-50u-0.1-60-0.1 u-6.0WEITRON1/5 24-Jul-07http://www.weitron.com.tw2SA1037AKELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERI

FM120-M WILLAS2SA1037AKxLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.PNP SiliconSOD-123H Low profile surface mounted application in order

FM120-M WILLAS2SA1036KxLT1THRU(*32V, *0.5A)Medium Power TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

2SA1037AK Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , 2SC2412K Excellent hFE linearity, Complementary pair with 2SC2412K. / Applications General amplifier applications. / Eq

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeatures We declare that the material of product compliance with RoHS requirements.L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pac

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

SMD Type TransistorsPNP Transistors2SA1036 (2SA1036K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLarge IC. ICMax. = -500mALow VCE(sat). Ideal for low-voltage operation.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter

SMD Type orSMD Type TransistICsPNP Transistors2SA1035SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Low noise voltage NV. High foward current transfer ratio hFE. 1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC2406.+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base volta

SMD Type TransistorsPNP Transistors2SA1037 (2SA1037AK)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=-50V1 2 Complments the 2SC2412+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

CHENMKO ENTERPRISE CO.,LTD2SA1037KGPSURFACE MOUNTPNP Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capability.(

CHENMKO ENTERPRISE CO.,LTD2SA1037WGPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current

CHENMKO ENTERPRISE CO.,LTD2SA1036KGPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)

RoHS 2SA1309A 2SA1309A TRANSISTOR (PNP) TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.1 A 3. BASE Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified

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RoHS RoHSCOMPLIANT COMPLIANT 2SA1037 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, solderable per

Plastic-Encapsulate TransistorsFEATURESExcellent hFE linearity.2SA1037(PNP)Complments the 2SC2412MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -60 VVCEOCollector-Emitter Voltage -50 VVEBOEmitter-Base Voltage -6 VICCollector Current -Continuous -150 mA1. BASECollector Power Dissipation PC 200 mW2. EMITTER SOT