LDTA115GET1G. Аналоги и основные параметры

Наименование производителя: LDTA115GET1G

Маркировка: Q4

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R2 = 100 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Статический коэффициент передачи тока (hFE): 82

Корпус транзистора: SC-89

 Аналоги (замена) для LDTA115GET1G

- подборⓘ биполярного транзистора по параметрам

 

LDTA115GET1G даташит

 ..1. Size:316K  lrc
 ldta115get1g.pdf pdf_icon

LDTA115GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTA115GET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.1. Size:768K  lrc
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LDTA115GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 7.2. Size:271K  lrc
 ldta115tet1g.pdf pdf_icon

LDTA115GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTA115TET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.3. Size:147K  lrc
 ldta114em3t5g ldta114tm3t5g ldta114ym3t5g ldta115em3t5g ldta123em3t5g ldta123jm3t5g ldta124em3t5g ldta124xm3t5g.pdf pdf_icon

LDTA115GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors LDTA114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi

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Другие транзисторы: LDTA113TKT1G, LDTA113ZET1G, LDTA114EM3T5G, LDTA114GET1G, LDTA114TM3T5G, LDTA114WET1G, LDTA114YM3T5G, LDTA115EM3T5G, TIP32C, LDTA115TET1G, LDTA123EM3T5G, LDTA123JM3T5G, LDTA123YET1G, LDTA124EM3T5G, LDTA124GET1G, LDTA124TET1G, LDTA124XM3T5G