LDTC123YET1G. Аналоги и основные параметры

Наименование производителя: LDTC123YET1G

Маркировка: N8

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 10 kOhm

Соотношение сопротивлений R1/R2 = 0.22

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Статический коэффициент передачи тока (hFE): 33

Корпус транзистора: SC-89

 Аналоги (замена) для LDTC123YET1G

- подборⓘ биполярного транзистора по параметрам

 

LDTC123YET1G даташит

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 ldtc123yet1g.pdf pdf_icon

LDTC123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTC123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.1. Size:223K  lrc
 ldtc123tkt1g.pdf pdf_icon

LDTC123YET1G

 7.2. Size:545K  lrc
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LDTC123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic

 7.3. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf pdf_icon

LDTC123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: LDTC115EM3T5G, LDTC115GET1G, LDTC115TET1G, LDTC123EET1G, LDTC123EM3T5G, LDTC123JET1G, LDTC123JM3T5G, LDTC123TKT1G, A733, LDTC124EET1G, LDTC124EM3T5G, LDTC124GET1G, LDTC124TET1G, LDTC124XET1G, LDTC124XM3T5G, LDTC125TET1G, LDTC143EET1G