LDTD114EET1G - описание и поиск аналогов

 

LDTD114EET1G - Аналоги. Основные параметры


   Наименование производителя: LDTD114EET1G
   Маркировка: Q5
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 10 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SC-89

 Аналоги (замена) для LDTD114EET1G

   - подбор ⓘ биполярного транзистора по параметрам

 

LDTD114EET1G - технические параметры

 ..1. Size:345K  lrc
 ldtd114eet1g.pdf pdf_icon

LDTD114EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD114EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.1. Size:314K  lrc
 ldtd114gkt1g.pdf pdf_icon

LDTD114EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD114GKT1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 8.1. Size:350K  lrc
 ldtd113eet1g.pdf pdf_icon

LDTD114EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD113EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 8.2. Size:357K  lrc
 ldtd113zet1g.pdf pdf_icon

LDTD114EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD113ZET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

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Другие транзисторы... LDTC144EM3T5G , LDTC144GET1G , LDTC144TET1G , LDTC144TM3T5G , LDTC144VET1G , LDTC144WET1G , LDTD113EET1G , LDTD113ZET1G , 2SC945 , LDTD114GKT1G , LDTD123EET1G , LDTD123TET1G , LDTD123YET1G , LDTD143EET1G , LDTD143TKT1G , LDTDG12GPT1G , LMUN2111LT1G .

 

 
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