LDTD123YET1G. Аналоги и основные параметры

Наименование производителя: LDTD123YET1G

Маркировка: E9

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 10 kOhm

Соотношение сопротивлений R1/R2 = 0.22

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 200 MHz

Статический коэффициент передачи тока (hFE): 56

Корпус транзистора: SC-89

 Аналоги (замена) для LDTD123YET1G

- подборⓘ биполярного транзистора по параметрам

 

LDTD123YET1G даташит

 ..1. Size:350K  lrc
ldtd123yet1g.pdfpdf_icon

LDTD123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 6.1. Size:369K  lrc
ldtd123ylt1g.pdfpdf_icon

LDTD123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res

 6.2. Size:369K  lrc
ldtd123ylt1g ldtd123ylt3g.pdfpdf_icon

LDTD123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123YLT1G with Monolithic Bias Resistor Network S-LDTD123YLT1G Applications Inverter, Interface, Driver Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 1 2) The bias res

 7.1. Size:326K  lrc
ldtd123tet1g.pdfpdf_icon

LDTD123YET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD123TET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

Другие транзисторы: LDTC144VET1G, LDTC144WET1G, LDTD113EET1G, LDTD113ZET1G, LDTD114EET1G, LDTD114GKT1G, LDTD123EET1G, LDTD123TET1G, 2SC2655, LDTD143EET1G, LDTD143TKT1G, LDTDG12GPT1G, LMUN2111LT1G, LMUN2112LT1G, LMUN2113LT1G, LMUN2114LT1G, LMUN2115LT1G