Биполярный транзистор LDTD143EET1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: LDTD143EET1G
Маркировка: E6
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Статический коэффициент передачи тока (hfe): 47
Корпус транзистора:
SC-89
Аналоги (замена) для LDTD143EET1G
LDTD143EET1G
Datasheet (PDF)
..1. Size:314K lrc
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9.3. Size:357K lrc
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