LMUN5116T1G - Аналоги. Основные параметры
Наименование производителя: LMUN5116T1G
Маркировка: 6F
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT-323
Аналоги (замена) для LMUN5116T1G
LMUN5116T1G - технические параметры
lmun5111t1g lmun5112t1g lmun5113t1g lmun5114t1g lmun5115t1g lmun5116t1g lmun5130t1g lmun5131t1g lmun5132t1g lmun5133t1g lmun5134t1g lmun5135t1g lmun5136t1g lmun5137t1g.pdf
lmun5111dw1t1g lmun5112dw1t1g lmun5113dw1t1g lmun5114dw1t1g lmun5115dw1t1g lmun5116dw1t1g lmun5130dw1t1g lmun5131dw1t1g lmun5132dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base emitter resistor. These Series digital transistors are
lmun5211dw1t1g lmun5212dw1t1g lmun5213dw1t1g lmun5214dw1t1g lmun5215dw1t1g lmun5216dw1t1g lmun5230dw1t1g lmun5231dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor
lmun5211t1g lmun5212t1g lmun5213t1g lmun5214t1g lmun5215t1g lmun5216t1g lmun5230t1g lmun5231t1g lmun5232t1g lmun5233t1g lmun5234t1g lmun5235t1g lmun5237t1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G NPN Silicon Surface Mount Transistor Series with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 1 Transistor) contains a single transistor with a monolithic bias network con- 2 sisting of two r
Другие транзисторы... LMUN5112T1G , LMUN5113DW1T1G , LMUN5113T1G , LMUN5114DW1T1G , LMUN5114T1G , LMUN5115DW1T1G , LMUN5115T1G , LMUN5116DW1T1G , TIP41 , LMUN5130DW1T1G , LMUN5130T1G , LMUN5131DW1T1G , LMUN5131T1G , LMUN5132DW1T1G , LMUN5132T1G , LMUN5133DW1T1G , LMUN5133T1G .
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