Биполярный транзистор LMUN5213T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMUN5213T1G
Маркировка: 8C
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT-323
Аналоги (замена) для LMUN5213T1G
LMUN5213T1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r
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LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor
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LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are
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