2SA1048(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Audio Frequency Applications Small package. High voltage: V = -50 V (min) CEO High h h = 70~400 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 0.2dB (typ.), 3dB (m

2SA1048 -0.15 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92S FEATURES Small Package High Voltage MillimeterREF. Min. Max. Excellent hFE Linearity A 3.90 4.10B 3.05 3.25C 1.42 1.62D 15.1 15.5E 2.97 3.27F 0.66 0.86G 2.44 2.64CLASSIFICATION O

2SA1048 TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage: VCEO=-50V(Min.) High hFE: hFE=70~400 Low noise: NF=1dB(Typ.),10dB(Max.) Complementary to 2SC2458 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in

MCCMicro Commercial ComponentsTM2SA1048-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1048-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates PNPCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1

MCCMicro Commercial ComponentsTM2SA1048-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1048-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates PNPCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1

2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Unit: mm Small package. High breakdown voltage: V = -120 V CEO High h h = 200~700 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2459. Maxi

JMnic Product Specification Silicon PNP Power Transistors 2SA1044 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

JMnic Product Specification Silicon PNP Power Transistors 2SA1043 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

JMnic Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symb

isc Silicon PNP Darlington Power Transistor 2SA1046DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierDC-DC convertersABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1044DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -70V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SC2434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierDC-DC converters

isc Silicon PNP Power Transistor 2SA1040DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2430Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching , high frequency poweramplifer, switching regulator and

isc Silicon PNP Power Transistor 2SA1043DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SC2433Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationspower amplifierDC-DC convertersABSOLUTE MAX

isc Silicon PNP Power Transistor 2SA1042DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOComplement to Type 2SC2432Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high voltage switching systems.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SA1041DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2431Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high voltage switching systems.ABSOLUTE MAXIMUM RATINGS(T =2