MMUN2211LT1. Аналоги и основные параметры

Наименование производителя: MMUN2211LT1

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 10 kOhm

Встроенный резистор цепи смещения R2 = 10 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 35

Корпус транзистора: SOT-23

 Аналоги (замена) для MMUN2211LT1

- подборⓘ биполярного транзистора по параметрам

 

MMUN2211LT1 даташит

 0.1. Size:171K  onsemi
mmun2211lt1-d.pdfpdf_icon

MMUN2211LT1

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series

 0.2. Size:215K  onsemi
mmun2211lt1g mmun2211lt3g mmun2212lt1g mmun2213lt1g mmun2214lt1g mmun2215lt1g mmun2216lt1g mmun2230lt1g mmun2231lt1g mmun2232lt1g mmun2233lt1g mmun2234lt1g.pdfpdf_icon

MMUN2211LT1

MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor

 6.1. Size:441K  wietron
mmun2211.pdfpdf_icon

MMUN2211LT1

MMUN2211 Series COLLECTOR 3 Bias Resistor Transistor 3 BASE R1 NPN Silicon 1 R2 1 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit 50 Vdc Collector-Emitter Voltage VCEO Collector-Base Voltage 50 Vdc VCBO Collector Current-Continuous I 100 mAdc C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation FR-5 Board (1

Другие транзисторы: MMUN2137L, MMUN2137LT1G, MMUN2138L, MMUN2138LT1G, MMUN2140L, MMUN2140LT1G, MMUN2141L, MMUN2141LT1G, A733, MMUN2211LT1G, MMUN2211LT3G, MMUN2212LT1, MMUN2212LT1G, MMUN2213LT1, MMUN2213LT1G, MMUN2214LT1, MMUN2214LT1G