Биполярный транзистор MUN2134 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MUN2134
Маркировка: 6L
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.47
Максимальная рассеиваемая мощность (Pc): 0.23 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SC-59
MUN2134 Datasheet (PDF)
mun2134.pdf
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nsvmmun2135lt1g.pdf
MUN2135, MMUN2135L,MUN5135, DTA123JE,DTA123JM3, NSBA123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co
mun2132.pdf
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mmun2135.pdf
MMUN2135Bias Resistor TransistorCOLLECT OR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipation F
lmun2135lt1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2135LT1GS-LMUN2135LT1GPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network 3This new series of digital transistors is designed to replace a single1device and its external resistor bias network. The BRT (Bias Resistor2Transistor) contains a single transistor with a monolithic bias networkconsisting
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