Биполярный транзистор MUN2216T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MUN2216T1G
Маркировка: 8F
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.23 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SC-59
Аналоги (замена) для MUN2216T1G
MUN2216T1G Datasheet (PDF)
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MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network
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MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
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LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
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Lead FreeRoHS CompliantMEI
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