MUN5336DW1T1G datasheet, аналоги, основные параметры

Наименование производителя: MUN5336DW1T1G  📄📄 

Маркировка: 36

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 100 kOhm

Встроенный резистор цепи смещения R2 = 100 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.187 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT-363

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MUN5336DW1T1G даташит

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MUN5336DW1T1G

MUN5336DW1 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW NPN and PNP Transistors with Monolithic Bias Resistor Network http //onsemi.com This series of digital transistors is designed to replace a single PIN CONNECTIONS device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias (3) (2) (1) n

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MUN5336DW1T1G

MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli

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MUN5336DW1T1G

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and

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MUN5336DW1T1G

Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias Resistor Network MUN5333DW1, www.onsemi.com NSBC143ZPDXV6, NSBC143ZPDP6 PIN CONNECTIONS (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single t

Другие транзисторы: MUN5330DW1T1G, MUN5331DW1, MUN5331DW1T1G, MUN5332DW1T1G, MUN5333DW1T1G, MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, S8050, PBRN113EK, PBRN113ES, PBRN113ZK, PBRN113ZS, PBRN123EK, PBRN123ES, PBRN123YK, PBRN123YS