PDTC123YS datasheet, аналоги, основные параметры
Наименование производителя: PDTC123YS 📄📄
Маркировка: TC123Y
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.22
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hFE): 35
Корпус транзистора: SOT-54
Аналоги (замена) для PDTC123YS
- подборⓘ биполярного транзистора по параметрам
PDTC123YS даташит
..1. Size:137K nxp
pdtc123yk pdtc123ys.pdf 
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
6.1. Size:137K nxp
pdtc123y.pdf 
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
7.1. Size:54K motorola
pdtc123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.2. Size:55K motorola
pdtc123je 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.3. Size:56K motorola
pdtc123jt 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.4. Size:55K motorola
pdtc123et 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.5. Size:182K philips
pdtc123e series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.6. Size:54K philips
pdtc123jef 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.7. Size:55K philips
pdtc123je 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.8. Size:174K philips
pdtc123j series.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2004 Aug 13 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123J series R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
7.9. Size:56K philips
pdtc123jt 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.10. Size:55K philips
pdtc123et 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.11. Size:78K philips
pdtc123tk pdtc123ts pdtc123t ser.pdf 
PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK
7.12. Size:139K nxp
pdtc123eef pdtc123ek pdtc123es.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
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