Справочник транзисторов. RT1N14HS

 

Биполярный транзистор RT1N14HS - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: RT1N14HS
   Маркировка: N14H
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 2.1
   Максимальная рассеиваемая мощность (Pc): 0.45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 24
   Корпус транзистора: TO92S

 Аналоги (замена) для RT1N14HS

 

 

RT1N14HS Datasheet (PDF)

 ..1. Size:126K  isahaya
rt1n14hc rt1n14hm rt1n14hs rt1n14hu.pdf

RT1N14HS
RT1N14HS

TransistorRT1N14HX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14HX is one chip transistor RT1N14HC with built-in bias resistor, PNP type is RT1P14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switch

 8.1. Size:126K  isahaya
rt1n140c rt1n140m rt1n140s rt1n140u.pdf

RT1N14HS
RT1N14HS

TransistorRT1N140X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N140X is a one chip transistor RT1N140C with built-in bias resistor, PNP type is RT1P140X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k) APPLICATION Inverted circuit, switching circ

 8.2. Size:126K  isahaya
rt1n14bc rt1n14bm rt1n14bs rt1n14bu.pdf

RT1N14HS
RT1N14HS

TransistorRT1N14BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N14BX is one chip transistor RT1N14BC with built-in bias resistor, PNP type is RT1P14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION . Inverted circuit,switching circ

 8.3. Size:160K  isahaya
rt1n141c rt1n141m rt1n141s rt1n141u.pdf

RT1N14HS
RT1N14HS

TransistorRT1N141X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N141X is a one chip transistor RT1N141C with built-in bias resistor,PNP type is RT1P141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION Inverted circuit,switch

 8.4. Size:170K  isahaya
rt1n144c rt1n144m rt1n144s rt1n144u.pdf

RT1N14HS
RT1N14HS

TransistorRT1N144X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N144X is a one chip transistor RT1N144C with built-in bias resistor,PNP type is RT1P144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION Inverted circuit,switch

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