RT1N150M datasheet, аналоги, основные параметры
Наименование производителя: RT1N150M
Маркировка: NS
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 100 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC-70
Аналоги (замена) для RT1N150M
- подборⓘ биполярного транзистора по параметрам
RT1N150M даташит
rt1n150c rt1n150m rt1n150s rt1n150u.pdf
Transistor RT1N150X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N150X is a one chip transistor RT1N150C with built-in bias resistor,PNP type is RT1P150X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=100k ). APPLICATION Inverted circuit,switching circ
rt1n151c rt1n151m rt1n151s rt1n151u.pdf
Transistor RT1N151X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N151X is a one chip transistor RT1N151C with built-in bias resistor,PNP type is RT1P151X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=100k ,R2=100k ). APPLICATION Inverted circuit,swit
rt1n15bc rt1n15bm rt1n15bs rt1n15bu.pdf
Transistor RT1N15BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N15BX is one chip transistor RT1N15BC With built-in bias resistor, PNP type is RT1P15BX. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R2=100k ). APPLICATION Inverted circuit, switching circ
rt1n140c rt1n140m rt1n140s rt1n140u.pdf
Transistor RT1N140X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N140X is a one chip transistor RT1N140C with built-in bias resistor, PNP type is RT1P140X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=10k ) APPLICATION Inverted circuit, switching circ
Другие транзисторы: RT1N14BM, RT1N14BS, RT1N14BU, RT1N14HC, RT1N14HM, RT1N14HS, RT1N14HU, RT1N150C, TIP3055, RT1N150S, RT1N150U, RT1N151C, RT1N151M, RT1N151S, RT1N151U, RT1N15BC, RT1N15BM
History: RT1N150S | HEPS5025 | 2SD1880
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n5496 | 2sb600 | 2sa1209 | 2sc1364 replacement | 2sd665 | 7506 mosfet datasheet | 2sb1186a | a1695 datasheet












