RT1N150S datasheet, аналоги, основные параметры

Наименование производителя: RT1N150S

Маркировка: N150

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 100 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.45 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 200 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: TO92S

 Аналоги (замена) для RT1N150S

- подборⓘ биполярного транзистора по параметрам

 

RT1N150S даташит

 ..1. Size:126K  isahaya
rt1n150c rt1n150m rt1n150s rt1n150u.pdfpdf_icon

RT1N150S

Transistor RT1N150X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N150X is a one chip transistor RT1N150C with built-in bias resistor,PNP type is RT1P150X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=100k ). APPLICATION Inverted circuit,switching circ

 8.1. Size:127K  isahaya
rt1n151c rt1n151m rt1n151s rt1n151u.pdfpdf_icon

RT1N150S

Transistor RT1N151X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N151X is a one chip transistor RT1N151C with built-in bias resistor,PNP type is RT1P151X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=100k ,R2=100k ). APPLICATION Inverted circuit,swit

 8.2. Size:126K  isahaya
rt1n15bc rt1n15bm rt1n15bs rt1n15bu.pdfpdf_icon

RT1N150S

Transistor RT1N15BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N15BX is one chip transistor RT1N15BC With built-in bias resistor, PNP type is RT1P15BX. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R2=100k ). APPLICATION Inverted circuit, switching circ

 9.1. Size:126K  isahaya
rt1n140c rt1n140m rt1n140s rt1n140u.pdfpdf_icon

RT1N150S

Transistor RT1N140X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N140X is a one chip transistor RT1N140C with built-in bias resistor, PNP type is RT1P140X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=10k ) APPLICATION Inverted circuit, switching circ

Другие транзисторы: RT1N14BS, RT1N14BU, RT1N14HC, RT1N14HM, RT1N14HS, RT1N14HU, RT1N150C, RT1N150M, D882, RT1N150U, RT1N151C, RT1N151M, RT1N151S, RT1N151U, RT1N15BC, RT1N15BM, RT1N15BS