RT1N230C datasheet, аналоги, основные параметры

Наименование производителя: RT1N230C

Маркировка: NL

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 200 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SC-59

 Аналоги (замена) для RT1N230C

- подборⓘ биполярного транзистора по параметрам

 

RT1N230C даташит

 ..1. Size:126K  isahaya
rt1n230c rt1n230m rt1n230s rt1n230u.pdfpdf_icon

RT1N230C

Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir

 8.1. Size:127K  isahaya
rt1n231c rt1n231m rt1n231s rt1n231u.pdfpdf_icon

RT1N230C

Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit

 8.2. Size:157K  isahaya
rt1n234c rt1n234m rt1n234s rt1n234u.pdfpdf_icon

RT1N230C

Transistor RT1N234X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N234X is a one chip transistor RT1N234C with built-in bias resistor,PNP type is RT1P234X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=10k ). APPLICATION Inverted circuit,switc

 8.3. Size:152K  isahaya
rt1n237c rt1n237m rt1n237s rt1n237u.pdfpdf_icon

RT1N230C

Transistor RT1N237X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N237X is a one chip transistor RT1N237C with built-in bias resistor,PNP type is RT1P237X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=47k ). APPLICATION Inverted circuit,switc

Другие транзисторы: RT1N151C, RT1N151M, RT1N151S, RT1N151U, RT1N15BC, RT1N15BM, RT1N15BS, RT1N15BU, 2SD1047, RT1N230M, RT1N230S, RT1N230U, RT1N231C, RT1N231M, RT1N231S, RT1N231U, RT1N234C