Справочник транзисторов. RT1N250C

 

Биполярный транзистор RT1N250C Даташит. Аналоги


   Наименование производителя: RT1N250C
   Маркировка: NT
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 200 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SC-59
     - подбор биполярного транзистора по параметрам

 

RT1N250C Datasheet (PDF)

 ..1. Size:125K  isahaya
rt1n250c rt1n250m rt1n250s rt1n250u.pdfpdf_icon

RT1N250C

TransistorRT1N250X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N250X is a one chip transistor RT1N250C with built-in bias resistor,PNP type is RT1P250X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=200k). APPLICATION Inverted circuit,switching circ

 9.1. Size:126K  isahaya
rt1n230c rt1n230m rt1n230s rt1n230u.pdfpdf_icon

RT1N250C

TransistorRT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k) APPLICATION Inverted circuit, switching cir

 9.2. Size:129K  isahaya
rt1n242c rt1n242m rt1n242s rt1n242u.pdfpdf_icon

RT1N250C

TransistorRT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION Inverted circuit,switchin

 9.3. Size:127K  isahaya
rt1n231c rt1n231m rt1n231s rt1n231u.pdfpdf_icon

RT1N250C

TransistorRT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION Inverted circuit,swit

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: RCA9116E | KSC900G | Q-00369C | KT8143M | BF883 | 3DA8A | NSVMMBT5401WT1G

 

 
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