Биполярный транзистор RT1N250M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1N250M
Маркировка: NT
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 200 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-70
RT1N250M Datasheet (PDF)
rt1n250c rt1n250m rt1n250s rt1n250u.pdf
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TransistorRT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k) APPLICATION Inverted circuit, switching cir
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TransistorRT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION Inverted circuit,switchin
rt1n231c rt1n231m rt1n231s rt1n231u.pdf
TransistorRT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION Inverted circuit,swit
rt1n241c rt1n241m rt1n241s rt1n241u.pdf
TransistorRT1N241X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N241X is a one chip transistor RT1N241C with built-in bias resistor,PNP type is RT1P241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
rt1n234c rt1n234m rt1n234s rt1n234u.pdf
TransistorRT1N234X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N234X is a one chip transistor RT1N234C with built-in bias resistor,PNP type is RT1P234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION Inverted circuit,switc
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TransistorRT1N237X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N237X is a one chip transistor RT1N237C with built-in bias resistor,PNP type is RT1P237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION Inverted circuit,switc
rt1n240c rt1n240m rt1n240s rt1n240u.pdf
TransistorRT1N240X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N240X is a one chip transistor RT1N240C with built-in bias resistor, PNP type is RT1P240X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k) APPLICATION Inverted circuit, switching circ
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TransistorRT1N24BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N24BX is one chip transistor RT1N24BC with built-in bias resistor, PNP type is RT1P24BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=22k). APPLICATION Inverted circuit, switching circu
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