RT1N250M datasheet, аналоги, основные параметры
Наименование производителя: RT1N250M
Маркировка: NT
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 200 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC-70
Аналоги (замена) для RT1N250M
- подборⓘ биполярного транзистора по параметрам
RT1N250M даташит
rt1n250c rt1n250m rt1n250s rt1n250u.pdf
Transistor RT1N250X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N250X is a one chip transistor RT1N250C with built-in bias resistor,PNP type is RT1P250X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=200k ). APPLICATION Inverted circuit,switching circ
rt1n230c rt1n230m rt1n230s rt1n230u.pdf
Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir
rt1n242c rt1n242m rt1n242s rt1n242u.pdf
Transistor RT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ,R2=47k ). APPLICATION Inverted circuit,switchin
rt1n231c rt1n231m rt1n231s rt1n231u.pdf
Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit
Другие транзисторы: RT1N242M, RT1N242S, RT1N242U, RT1N24BC, RT1N24BM, RT1N24BS, RT1N24BU, RT1N250C, D880, RT1N250S, RT1N250U, RT1N430C, RT1N430M, RT1N430S, RT1N430U, RT1N431C, RT1N431M
History: RT1P242U
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