2SA1074 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SA1074 Даташит. Аналоги

   Наименование производителя: 2SA1074
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 130 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 670 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO3

Аналоги (замена) для 2SA1074

- подбор биполярного транзистора по параметрам

2SA1074 Datasheet (PDF)

..1. Size:149K jmnic
2sa1074.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col

..2. Size:168K inchange semiconductor
2sa1074.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1074DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio stepping motor and otherlinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME

8.1. Size:187K fuji
2sa1075 2sa1076.pdf pdf_icon

8.2. Size:210K fuji
2sa1072 2sa1073.pdf pdf_icon

8.3. Size:180K fuji
2sa1078.pdf pdf_icon

8.4. Size:181K fuji
2sa1077.pdf pdf_icon

8.5. Size:149K jmnic
2sa1079.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

8.6. Size:128K jmnic
2sa1075 2sa1076.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Coll

8.7. Size:156K jmnic
2sa1073.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s

8.8. Size:150K jmnic
2sa1078.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

8.9. Size:156K jmnic
2sa1072.pdf pdf_icon

8.10. Size:152K jmnic
2sa1077.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou

8.11. Size:219K inchange semiconductor
2sa1076.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1076DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(

8.12. Size:215K inchange semiconductor
2sa1079.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2529Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX

8.13. Size:178K inchange semiconductor
2sa1075 2sa1076.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Ba

8.14. Size:163K inchange semiconductor
2sa1072 2sa1073.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2

8.15. Size:312K inchange semiconductor
2sa1073.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1073DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2523Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators

8.16. Size:215K inchange semiconductor
2sa1078.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1078DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2528Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX

8.17. Size:206K inchange semiconductor
2sa1072.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1072DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2522Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators

8.18. Size:213K inchange semiconductor
2sa1077.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1077DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsD

8.19. Size:181K inchange semiconductor
2sa1075.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1075DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(

Другие транзисторы... 2SA1067 , 2SA1068 , 2SA1069 , 2SA1069A , 2SA107 , 2SA1072 , 2SA1072A , 2SA1073 , 2SC2240 , 2SA1075 , 2SA1076 , 2SA1077 , 2SA1078 , 2SA1079 , 2SA108 , 2SA1080 , 2SA1081 .