RT1N250U datasheet, аналоги, основные параметры

Наименование производителя: RT1N250U

Маркировка: NT

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 200 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 200 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SC-75A

 Аналоги (замена) для RT1N250U

- подборⓘ биполярного транзистора по параметрам

 

RT1N250U даташит

 ..1. Size:125K  isahaya
rt1n250c rt1n250m rt1n250s rt1n250u.pdfpdf_icon

RT1N250U

Transistor RT1N250X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N250X is a one chip transistor RT1N250C with built-in bias resistor,PNP type is RT1P250X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=200k ). APPLICATION Inverted circuit,switching circ

 9.1. Size:126K  isahaya
rt1n230c rt1n230m rt1n230s rt1n230u.pdfpdf_icon

RT1N250U

Transistor RT1N230X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N230X is a one chip transistor RT1N230C with built-in bias resistor, PNP type is RT1P230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ) APPLICATION Inverted circuit, switching cir

 9.2. Size:129K  isahaya
rt1n242c rt1n242m rt1n242s rt1n242u.pdfpdf_icon

RT1N250U

Transistor RT1N242X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N242X is a one chip transistor RT1N242C with built-in bias resistor,PNP type is RT1P242X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ,R2=47k ). APPLICATION Inverted circuit,switchin

 9.3. Size:127K  isahaya
rt1n231c rt1n231m rt1n231s rt1n231u.pdfpdf_icon

RT1N250U

Transistor RT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION Inverted circuit,swit

Другие транзисторы: RT1N242U, RT1N24BC, RT1N24BM, RT1N24BS, RT1N24BU, RT1N250C, RT1N250M, RT1N250S, D209L, RT1N430C, RT1N430M, RT1N430S, RT1N430U, RT1N431C, RT1N431M, RT1N431S, RT1N431U