Биполярный транзистор 2SA1078 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1078
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 135 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO220
2SA1078 Datasheet (PDF)
2sa1078.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
2sa1078.pdf
isc Silicon PNP Power Transistor 2SA1078DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2528Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
2sa1079.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sa1075 2sa1076.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Coll
2sa1073.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
2sa1072.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
2sa1077.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou
2sa1074.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col
2sa1076.pdf
isc Silicon PNP Power Transistor 2SA1076DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
2sa1079.pdf
isc Silicon PNP Power Transistor 2SA1079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2529Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
2sa1075 2sa1076.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Ba
2sa1072 2sa1073.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2
2sa1073.pdf
isc Silicon PNP Power Transistor 2SA1073DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2523Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
2sa1072.pdf
isc Silicon PNP Power Transistor 2SA1072DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2522Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
2sa1077.pdf
isc Silicon PNP Power Transistor 2SA1077DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsD
2sa1075.pdf
isc Silicon PNP Power Transistor 2SA1075DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
2sa1074.pdf
isc Silicon PNP Power Transistor 2SA1074DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio stepping motor and otherlinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050