RT1P130U - Даташиты. Аналоги. Основные параметры
Наименование производителя: RT1P130U
Маркировка: PP
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-75A
RT1P130U Datasheet (PDF)
rt1p130c rt1p130m rt1p130s rt1p130u.pdf
Transistor RT1P130X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P130X is a one chip transistor RT1P130C with built-in bias resistor,NPN type is RT1N130X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ). APPLICATION . Inverted circuit,switching circ
rt1p137p.pdf
ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person
rt1p136c rt1p136m rt1p136s rt1p136u.pdf
Transistor RT1P136X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P136X is a one chip transistor RT1P136C with built-in bias resistor,NPN type is RT1N136X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=1k ,R2=10k ). APPLICATION Inverted circuit,switchi
rt1p137s.pdf
RT1P137S Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k , R =22k 1 2 High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)
Другие транзисторы... RT1N44HU , RT1N44QC , RT1N44QM , RT1N44QS , RT1N44QU , RT1P130C , RT1P130M , RT1P130S , BC548 , RT1P136C , RT1P136M , RT1P136S , RT1P136U , RT1P137P , RT1P137S , RT1P140C , RT1P140M .
History: AC160 | DNLS160V | CHDTC115EKGP | MMUN2131 | TI808 | DRA2115G | AC152
History: AC160 | DNLS160V | CHDTC115EKGP | MMUN2131 | TI808 | DRA2115G | AC152
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