Биполярный транзистор 2SA1079 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1079
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 135 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO220
2SA1079 Datasheet (PDF)
2sa1079.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
2sa1079.pdf
isc Silicon PNP Power Transistor 2SA1079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2529Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
2sa1075 2sa1076.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Coll
2sa1073.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
2sa1078.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
2sa1072.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
2sa1077.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou
2sa1074.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col
2sa1076.pdf
isc Silicon PNP Power Transistor 2SA1076DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
2sa1075 2sa1076.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Ba
2sa1072 2sa1073.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2
2sa1073.pdf
isc Silicon PNP Power Transistor 2SA1073DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2523Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
2sa1078.pdf
isc Silicon PNP Power Transistor 2SA1078DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2528Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
2sa1072.pdf
isc Silicon PNP Power Transistor 2SA1072DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2522Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
2sa1077.pdf
isc Silicon PNP Power Transistor 2SA1077DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsD
2sa1075.pdf
isc Silicon PNP Power Transistor 2SA1075DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
2sa1074.pdf
isc Silicon PNP Power Transistor 2SA1074DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio stepping motor and otherlinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050