Биполярный транзистор RT1P141S
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1P141S
Маркировка: P141
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.45
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
TO-92S
Аналоги (замена) для RT1P141S
RT1P141S
Datasheet (PDF)
..1. Size:137K isahaya
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8.1. Size:163K isahaya
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8.3. Size:126K isahaya
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8.4. Size:127K isahaya
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