Биполярный транзистор RT1P151M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1P151M
Маркировка: PA
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 82
Корпус транзистора: SC-70
RT1P151M Datasheet (PDF)
rt1p151c rt1p151m rt1p151s rt1p151u.pdf
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rt1p150c rt1p150m rt1p150s rt1p150u.pdf
TransistorRT1P150X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P150X is a one chip transistor RT1P150C with built-in bias resistor,NPN type is RT1N150X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=100k). APPLICATION . Inverted circuit,switching ci
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rt1p137p.pdf
ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person
rt1p136c rt1p136m rt1p136s rt1p136u.pdf
TransistorRT1P136X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P136X is a one chip transistor RT1P136C with built-in bias resistor,NPN type is RT1N136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi
rt1p144c rt1p144m rt1p144s rt1p144u.pdf
TransistorRT1P144X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P144X is a one chip transistor RT1P144C with built-in bias resistor,NPN type is RT1N144X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=47k). APPLICATION . Inverted circuit,switch
rt1p140c rt1p140m rt1p140s rt1p140u.pdf
TransistorRT1P140X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P140X is a one chip transistor RT1P140C with built-in bias resistor,NPN type is RT1N140X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k). APPLICATION . Inverted circuit,switching cir
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TransistorRT1P14HX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14HX is a one chip transistor RT1P14HC with built-in bias resistor,NPN type is RT1N14HX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=4.7k). APPLICATION Inverted circuit,switc
rt1p130c rt1p130m rt1p130s rt1p130u.pdf
TransistorRT1P130X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P130X is a one chip transistor RT1P130C with built-in bias resistor,NPN type is RT1N130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION . Inverted circuit,switching circ
rt1p14bc rt1p14bm rt1p14bs rt1p14bu.pdf
TransistorRT1P14BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P14BX is a one chip transistor RT1P14BC with built-in bias resistor,NPN type is RT1N14BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=10k). APPLICATION Inverted circuit,switching circu
rt1p141c rt1p141m rt1p141s rt1p141u.pdf
TransistorRT1P141X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P141X is a one chip transistor RT1P141C with built-in bias resistor,NPN type is RT1N141X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=10k,R2=10k). APPLICATION . Inverted circuit,swit
rt1p137s.pdf
RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NTE2346
History: NTE2346
Список транзисторов
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