RT1P230C datasheet, аналоги, основные параметры

Наименование производителя: RT1P230C

Маркировка: PL

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 150 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SC-59

 Аналоги (замена) для RT1P230C

- подборⓘ биполярного транзистора по параметрам

 

RT1P230C даташит

 ..1. Size:127K  isahaya
rt1p230c rt1p230m rt1p230s rt1p230u.pdfpdf_icon

RT1P230C

Transistor RT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ). APPLICATION . Inverted circuit,switching ci

 8.1. Size:153K  isahaya
rt1p234c rt1p234m rt1p234s rt1p234u.pdfpdf_icon

RT1P230C

Transistor RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=10k ). APPLICATION . Inverted circuit,swi

 8.2. Size:127K  isahaya
rt1p237c rt1p237m rt1p237s rt1p237u.pdfpdf_icon

RT1P230C

Transistor RT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=47k ). APPLICATION . Inverted circuit,swi

 8.3. Size:131K  isahaya
rt1p231c rt1p231m rt1p231s rt1p231u.pdfpdf_icon

RT1P230C

Transistor RT1P231X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P231X is a one chip transistor RT1P231C with built-in bias resistor,NPN type is RT1N231X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=2.2k ). APPLICATION . Inverted circuit,sw

Другие транзисторы: RT1P151C, RT1P151M, RT1P151S, RT1P151U, RT1P15BC, RT1P15BM, RT1P15BS, RT1P15BU, TIP31, RT1P230C, RT1P230S, RT1P230U, RT1P231C, RT1P231M, RT1P231S, RT1P231U, RT1P234C