Биполярный транзистор RT1P250M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1P250M
Маркировка: PT
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 200 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-70
RT1P250M Datasheet (PDF)
rt1p250c rt1p250m rt1p250s rt1p250u.pdf
TransistorRT1P250X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P250X is a one chip transistor RT1P250C with built-in bias resistor,NPN type is RT1N250X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=200k). APPLICATION . Inverted circuit,switching ci
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TransistorRT1P240X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P240X is a one chip transistor RT1P240C with built-in bias resistor,NPN type is RT1N240X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k). APPLICATION . Inverted circuit,switching cir
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TransistorRT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION . Inverted circuit,swi
rt1p242c rt1p242m rt1p242s rt1p242u.pdf
TransistorRT1P242X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P242X is a one chip transistor RT1P242C with built-in bias resistor,NPN type is RT1N242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION . Inverted circuit,swit
rt1p241c rt1p241m rt1p241s rt1p241u.pdf
TransistorRT1P241X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P241X is a one chip transistor RT1P241C with built-in bias resistor,NPN type is RT1N241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
rt1p230c rt1p230m rt1p230s rt1p230u.pdf
TransistorRT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k). APPLICATION . Inverted circuit,switching ci
rt1p237c rt1p237m rt1p237s rt1p237u.pdf
TransistorRT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION . Inverted circuit,swi
rt1p231c rt1p231m rt1p231s rt1p231u.pdf
TransistorRT1P231X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P231X is a one chip transistor RT1P231C with built-in bias resistor,NPN type is RT1N231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION . Inverted circuit,sw
rt1p24bc rt1p24bm rt1p24bs rt1p24bu.pdf
TransistorRT1P24BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P24BX is a one chip transistor RT1P24BC with built-in bias resistor,NPN type is RT1N24BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=22k). APPLICATION Inverted circuit,switching circu
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