Биполярный транзистор 2SA1085 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1085
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора: TO92
2SA1085 Datasheet (PDF)
2sa1083 2sa1084 2sa1085.pdf
2SA1083, 2SA1084, 2SA1085Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1083, 2SA1084, 2SA1085Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1083 2SA1084 2SA1085 UnitCollector to base voltage VCBO 60 90 120 VCollector t
2sa1025 2sa1081 2sa1082.pdf
2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter
2sa1082.pdf
2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1082-D 2SA1082-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B
2sa1084.pdf
2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1084-D 2SA1084-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1083.pdf
2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1083-D 2SA1083-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1081.pdf
2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1081-D 2SA1081-EA DRange 250~500 400~800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1082.pdf
isc Silicon PNP Transistor 2SA1082DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign For Amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -
2sa1080.pdf
isc Silicon PNP Power Transistor 2SA1080DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2530Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050