Справочник транзисторов. RT1P430U

 

Биполярный транзистор RT1P430U - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: RT1P430U
   Маркировка: P6
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SC-75A

 Аналоги (замена) для RT1P430U

 

 

RT1P430U Datasheet (PDF)

 ..1. Size:127K  isahaya
rt1p430c rt1p430m rt1p430s rt1p430u.pdf

RT1P430U
RT1P430U

TransistorRT1P430X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P430X is a one chip transistor RT1P430C with built-in bias resistor,NPN type is RT1N430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k). APPLICATION . Inverted circuit,switching ci

 8.1. Size:128K  isahaya
rt1p434c rt1p434m rt1p434s rt1p434u.pdf

RT1P430U
RT1P430U

TransistorRT1P434X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P434X is a one chip transistor RT1P434C with built-in bias resistor,NPN type is RT1N434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION . Inverted circuit,swi

 8.2. Size:167K  isahaya
rt1p436c rt1p436m rt1p436s rt1p436u.pdf

RT1P430U
RT1P430U

TransistorRT1P436X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P436X is a one chip transistor RT1P436C with built-in bias resistor,NPN type is RT1N436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION . Inverted circuit,switc

 8.3. Size:127K  isahaya
rt1p432c rt1p432m rt1p432s rt1p432u.pdf

RT1P430U
RT1P430U

TransistorRT1P432X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P432X is a one chip transistor RT1P432C with built-in bias resistor,NPN type is RT1N432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION . Inverted circuit,swi

 8.4. Size:156K  isahaya
rt1p431c rt1p431m rt1p431s.pdf

RT1P430U
RT1P430U

TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,s

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