Биполярный транзистор RT2P20M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT2P20M
Маркировка: P6
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SC-88A
RT2P20M Datasheet (PDF)
rt2p20m.pdf
RT2P20M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
rt2p25m.pdf
RT2P25M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
rt2p26m.pdf
RT2P26M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
rt2p27m.pdf
RT2P27M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
rt2p24m.pdf
RT2P24M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
rt2p28m.pdf
RT2P28M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
rt2p29m.pdf
RT2P29M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
rt2p22m.pdf
RT2P22M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050