Справочник транзисторов. 2SA1095

 

Биполярный транзистор 2SA1095 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1095
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 45 MHz
   Ёмкость коллекторного перехода (Cc): 350 pf
   Статический коэффициент передачи тока (hfe): 55
   Корпус транзистора: MT-200

 Аналоги (замена) для 2SA1095

 

 

2SA1095 Datasheet (PDF)

 ..1. Size:69K  no
2sa1095.pdf

2SA1095

 ..2. Size:170K  jmnic
2sa1095.pdf

2SA1095
2SA1095

JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION With MT-200 package Complement to type 2SC2565 High breakdown voltage High transition frequency APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to

 ..3. Size:222K  inchange semiconductor
2sa1095.pdf

2SA1095
2SA1095

isc Silicon PNP Power Transistor 2SA1095DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE

 8.1. Size:120K  toshiba
2sa1093.pdf

2SA1095
2SA1095

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:277K  toshiba
2sa1091.pdf

2SA1095
2SA1095

2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.)

 8.3. Size:91K  panasonic
2sa1096.pdf

2SA1095
2SA1095

Power Transistors2SA1096, 2SA1096ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC2497, 2SC2497A 3.160.1 Features Output of 5 W can be obtained by a complementary pair with2SC2497 and 2SC2497A TO-126B package which requires no insulation plate for installa-tion to the heat sink A

 8.4. Size:66K  no
2sa1094.pdf

2SA1095

 8.5. Size:201K  jmnic
2sa1096 2sa1096a.pdf

2SA1095
2SA1095

JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collect

 8.6. Size:155K  jmnic
2sa1093.pdf

2SA1095
2SA1095

JMnic Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION With TO-3P(I) package Complement to type 2SC2563 High transition frequency APPLICATIONS Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum rat

 8.7. Size:167K  jmnic
2sa1094.pdf

2SA1095
2SA1095

JMnic Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION With MT-200 package Complement to type 2SC2564 APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO

 8.8. Size:215K  inchange semiconductor
2sa1096.pdf

2SA1095
2SA1095

isc Silicon PNP Power Transistor 2SA1096DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

 8.9. Size:185K  inchange semiconductor
2sa1096-a 2sa1096 2sa1096a.pdf

2SA1095
2SA1095

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.10. Size:221K  inchange semiconductor
2sa1093.pdf

2SA1095
2SA1095

isc Silicon PNP Power Transistor 2SA1093DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 50W audio amplifier output stageABSOLUTE MAXIMUM R

 8.11. Size:222K  inchange semiconductor
2sa1094.pdf

2SA1095
2SA1095

isc Silicon PNP Power Transistor 2SA1094DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2564Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 80W high-fidelity audio frequencyamplifier output stageABSOLUTE M

 8.12. Size:215K  inchange semiconductor
2sa1096a.pdf

2SA1095
2SA1095

isc Silicon PNP Power Transistor 2SA1096ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNI

Другие транзисторы... 2SA109 , 2SA1090 , 2SA1091 , 2SA1091O , 2SA1091R , 2SA1092 , 2SA1093 , 2SA1094 , 2N5401 , 2SA1096 , 2SA1096A , 2SA1097 , 2SA110 , 2SA1100 , 2SA1102 , 2SA1103 , 2SA1104 .

 

 
Back to Top