Биполярный транзистор 2SA1095 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1095
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 45 MHz
Ёмкость коллекторного перехода (Cc): 350 pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: MT-200
2SA1095 Datasheet (PDF)
2sa1095.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION With MT-200 package Complement to type 2SC2565 High breakdown voltage High transition frequency APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to
2sa1095.pdf
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isc Silicon PNP Power Transistor 2SA1095DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE
2sa1093.pdf
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1091.pdf
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2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.)
2sa1096.pdf
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Power Transistors2SA1096, 2SA1096ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC2497, 2SC2497A 3.160.1 Features Output of 5 W can be obtained by a complementary pair with2SC2497 and 2SC2497A TO-126B package which requires no insulation plate for installa-tion to the heat sink A
2sa1096 2sa1096a.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collect
2sa1093.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION With TO-3P(I) package Complement to type 2SC2563 High transition frequency APPLICATIONS Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum rat
2sa1094.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION With MT-200 package Complement to type 2SC2564 APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO
2sa1096.pdf
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isc Silicon PNP Power Transistor 2SA1096DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT
2sa1096-a 2sa1096 2sa1096a.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sa1093.pdf
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isc Silicon PNP Power Transistor 2SA1093DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 50W audio amplifier output stageABSOLUTE MAXIMUM R
2sa1094.pdf
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isc Silicon PNP Power Transistor 2SA1094DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2564Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 80W high-fidelity audio frequencyamplifier output stageABSOLUTE M
2sa1096a.pdf
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isc Silicon PNP Power Transistor 2SA1096ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2497AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNI
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
![2SA1095](https://alltransistors.com/images/us.png)
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Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS